GaAs Hall Effect Element CYSJ106DFN

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GaAs Hall Effect Element CYSJ106DFN
CYSJ106DFN series Hall-effect element is an ion-implanted magnetic field sensor made of... more
GaAs Hall Effect Element CYSJ106DFN

CYSJ106DFN series Hall-effect element is an ion-implanted magnetic field sensor made of mono-crystal gallium arsenide (GaAs) semiconductor material group Ⅲ-V using ion-implanted technology. It can convert a magnetic flux density signal linearly into voltage output.

FEATURES

  • High Linearity 
  • Superior Temperature Stability 
  • Miniature Package 
  • Wide measuring range 0-3T

TYPICAL APPLICATION

  • Magnetic Field Measurement
  • DC Brushless Motor
  • Current Sensor
  • Non-contact Switch
  • Position Control
  • Detection Of Revolution

 

Information about product safety:

Manufacturer/ EU Responsible Person:

Company name: ChenYang Technologies GmbH & Co.KG

Address: Markt Schwabener Str. 8; 85464 Finsing; Deutschland

E-Mail: info@chenyang.de

Phone: +49 8121 2574100

Operating Temperature: -40°C ~ +125°C
Measuring range: 3T
Max. Sensitivity: 1.80 ~ 2.4 mV/mT
Linearity: 2%
Input/Output Resistance: 650 ~ 850 kΩ/ 650 ~ 850kΩ
Package/Size: DFN/1.2x0.5x0.3mm
Max. Supply current/voltage: 11mA/9.5V
Daten zum Produkthersteller more

Manufacturer:

Company name: ChenYang Technologies GmbH & Co.KG

Address: Markt Schwabener Str. 8; 85464 Finsing; Deutschland

E-Mail: info@chenyang.de

Phone: +49 8121 2574100

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